Identification | Back Directory | [Name]
TRIS(DIMETHYLAMINO)SILANE | [CAS]
15112-89-7 | [Synonyms]
TDMAS 3DMAS LS 1460 amino)siL (Me2N)3SiH 3DMAS : [(CH3)2N]3SiH Tri(dimethylamino)silane Tris(dimethyamino)silane Tris(dimethylamido)silane TRIS(DIMETHYLAMINO)SILANE TRIS(DIMETHYLAMINO)SILANE 99+% Tris(dimethylamino)silane Liquid Tris(dimethylamino)silane 3DMAS TRIS(DIMETHYLAMINO)SILANE, 99.9+% Tris(dimethylamino)silane, 99+% 3DMAS N,N',N''-Silanetriyltris(dimethylamine) N,N',N''-(Silanetriyl)tris(dimethylamine) n,n,n’,n’,n’’,n’’-hexamethyl-silanetriamin n,n,n’,n’,n’’,n’’-hexamethylsilanetriamine N,N,N’,N’,N’’,N’’-hexamethyl-Silanetriamine TRIS(DIMETHYLAMINO)SILANE ISO 9001:2015 REACH Silanetriamine, N,N,N',N',N'',N''-hexamethyl- Tris(dimethylamino)silane electronic grade, 99.999% Tris(dimethylamino)silane, 99+%, 3DMAS (99.999%-Si) PURATREM Tris(dimethylamino)silane packaged for use in deposition systems Tris(diMethylaMino)silane, 99+%, 14-8750, contained in 50 Ml Swagelok cylinder (96-1070) for CVD/ALD Tris(dimethylamino)silane, 99+%, 3DMAS (99.999%-Si) PURATREM, 14-8750, contained in 50 ml Swagelok cylinder (96-1070) for CVD/ALD Tris(dimethylamino)silane, 99+%, 3DMAS (99.999%-Si) PURATREM, 14-8750, contained in 50 ml Swagelok(R) cylinder (96-1070) for CVD/ALD N,N,N',N',N'',N''-hexamethyl-Silanetriamine tris(Dimethylamino)silane n,n,n',n',n'',n''-hexamethylsilanetriamine n,n,n',n',n'',n''-hexamethyl-silanetriamin Silanetriamine,N,N,N',N',N'',N''-hexamethyl- | [EINECS(EC#)]
239-165-0 | [Molecular Formula]
C6H19N3Si | [MDL Number]
MFCD00048006 | [MOL File]
15112-89-7.mol | [Molecular Weight]
161.32 |
Hazard Information | Back Directory | [Uses]
Tris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor. | [General Description]
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