| | 1312-41-0 Basic information More.. |
| Product Name: | Indium(III) antimonide | | Synonyms: | INDIUM ANTIMONIDE;indiumcompd.withantimony(1:1);Indium antimonide (99.99%-In) PURATREM;Indiumantimonideblackxtl;indium stibide;INDIUM ANTIMONIDE, 99.99+%;Indium antimonide, 99.5%;INDIUM ANTIMONIDE, 99.999% | | CAS: | 1312-41-0 | | MF: | InSb | | MW: | 236.58 | | EINECS: | 215-192-3 | | Mol File: | 1312-41-0.mol |  |
Use
In semiconductor electronics. Grown p-n junctions(Indium(III) antimonide) have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices.
- INDIUM ANTIMONIDE
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- US $1.00 / g
- 2019-07-06
- CAS:1312-41-0
- Min. Order: 50 g
- Purity: 99.9%
- Supply Ability: 20kg
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1312-41-0
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