| Identification | Back Directory | [Name]
TRIETHYLGALLIUM | [CAS]
1115-99-7 | [Synonyms]
Et3Ga
triethylgallane
TRIETHYLGALLIUM
triethyl-galliu
GALLIUM TRIETHYL
Triethylgallium,min.97%
Triethylgallium, min. 97%
Triethylgallium, Elec. Gr.
Triethylgalliumcolorlessliq
Triethylgalliumelecgrcolorlessliq
TRIETHYLGALLIUM ISO 9001：2015 REACH
Triethylgallium, elec. gr., 99.9998%
Triethylgallium,elec.gr.(99.9999%-Ga)PURATREM
Triethylgallium, elec. gr. (99.9999%-Ga) PURATREM **S.STEELCYL EXTRA** | [EINECS(EC#)]
214-232-7 | [Molecular Formula]
C6H15Ga | [MDL Number]
MFCD00015094 | [MOL File]
1115-99-7.mol | [Molecular Weight]
156.91 |
| Chemical Properties | Back Directory | [Melting point ]
-82,3°C | [Boiling point ]
143°C | [density ]
1,058 g/cm3 | [Fp ]
-18°C | [form ]
liquid | [color ]
colorless | [Specific Gravity]
1.0586 | [Hydrolytic Sensitivity]
10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required | [Sensitive ]
moisture sensitive | [EPA Substance Registry System]
Gallium, triethyl- (1115-99-7) |
| Questions And Answer | Back Directory | [Application]
High-purity triethylgallium and other organometallic compounds are the most important and widely used raw materials for growing optoelectronic materials in metal-organic chemical vapor deposition (MOCVD) and chemical beam epitaxy (CBE), and are widely used in growing compound semiconductor thin film materials such as indium gallium arsenide nitride (InGaAsN), indium gallium arsenide (InGaAs), and indium gallium phosphide (InGaP). |
|
|