- TRI-T-BUTOXYSILANOL
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- $2.00 / 1KG
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2019-07-06
- CAS:18166-43-3
- Min. Order: 1KG
- Purity: 99%
- Supply Ability: customsie
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| | TRI-T-BUTOXYSILANOL Basic information | | Uses |
| | TRI-T-BUTOXYSILANOL Chemical Properties |
| Melting point | 63-65 °C(lit.) | | Boiling point | 205-210 °C(lit.) | | density | 0,92 g/cm3 | | Fp | >65°C | | storage temp. | Inert atmosphere,Room Temperature | | form | solid | | pka | 11.78±0.53(Predicted) | | Sensitive | moisture sensitive | | Hydrolytic Sensitivity | 7: reacts slowly with moisture/water | | InChI | 1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3 | | InChIKey | HLDBBQREZCVBMA-UHFFFAOYSA-N | | SMILES | CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C |
| Risk Statements | 36/37/38 | | Safety Statements | 22-24/25 | | WGK Germany | 3 | | TSCA | No | | Storage Class | 11 - Combustible Solids |
| | TRI-T-BUTOXYSILANOL Usage And Synthesis |
| Uses | Silicon oxide source for rapid atomic layer deposition to prepare various nanolaminates.
| | Uses | Precursors Packaged for Depositions Systems | | Uses | Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates. | | General Description | Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica. |
| | TRI-T-BUTOXYSILANOL Preparation Products And Raw materials |
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