Chinese english Germany Japanese Korea

Sapphire substrate, 50.8mm dia x 0.432mm thick, EPI polished one side, C-axis, HEMCOR single crystal

Sapphire substrate, 50.8mm dia x 0.432mm thick, EPI polished one side, C-axis, HEMCOR single crystal Struktur
CAS-Nr.
Englisch Name:
Sapphire substrate, 50.8mm dia x 0.432mm thick, EPI polished one side, C-axis, HEMCOR single crystal
Synonyma:
Sapphire substrate, 50.8mm dia x 0.432mm thick, EPI polished one side, C-axis, HEMCOR single crystal
CBNumber:
CB02461571
Summenformel:
Molgewicht:
0
MOL-Datei:
Mol file
Request For Quotation

Sapphire substrate, 50.8mm dia x 0.432mm thick, EPI polished one side, C-axis, HEMCOR single crystal Eigenschaften

Sicherheit

Sapphire substrate, 50.8mm dia x 0.432mm thick, EPI polished one side, C-axis, HEMCOR single crystal Chemische Eigenschaften,Einsatz,Produktion Methoden

Sapphire substrate, 50.8mm dia x 0.432mm thick, EPI polished one side, C-axis, HEMCOR single crystal Upstream-Materialien And Downstream Produkte

Upstream-Materialien

Downstream Produkte

Sapphire substrate, 50.8mm dia x 0.432mm thick, EPI polished one side, C-axis, HEMCOR single crystal Anbieter Lieferant Produzent Hersteller Vertrieb Händler.

Global( 1)Lieferanten
Firmenname Telefon E-Mail Land Produktkatalog Edge Rate
Alfa Aesar 400-6106006
saleschina@alfa-asia.com China 30132 84
  • Sapphire substrate, 50.8mm dia x 0.432mm thick, EPI polished one side, C-axis, HEMCOR single crystal
Copyright 2019 © ChemicalBook. All rights reserved