Siliciumcarbid

Silicon carbide Struktur
409-21-2
CAS-Nr.
409-21-2
Bezeichnung:
Siliciumcarbid
Englisch Name:
Silicon carbide
Synonyma:
SiC;BLACK SILICON CARBIDE;nanopowder;CARBORUNDUM;Simax;carbonite;BOILING CHIPS;Silicon carbid;SILICON CARBIDE BLACK;ua1
CBNumber:
CB2431905
Summenformel:
CSi
Molgewicht:
40.1
MOL-Datei:
409-21-2.mol

Siliciumcarbid Eigenschaften

Schmelzpunkt:
2700 °C (lit.)
Dichte
3.22 g/mL at 25 °C (lit.)
chüttdichte
0.069g/cm3
Brechungsindex
2.6500
Löslichkeit
Soluble in molten sodium hydroxide, potassium hydroxide and in molten iron.
Aggregatzustand
nanopowder
Farbe
Green
Wichte
3.22
Widerstand (resistivity)
107–200 (ρ/μΩ.cm)
Wasserlöslichkeit
Soluble in molten alkalis (NaOH, KOH) and molten iron. Insoluble in water.
Wärmeleitfähigkeit
0.69 W/(m·K)
Spezifische Wärmekapazität
Cp(crystal): 0.67 J/(g·K), at 25℃
Crystal Structure
Cubic, Sphalerite Structure - Space Group F(-4)3m
Hydrolytic Sensitivity
1: no significant reaction with aqueous systems
Merck 
14,8492
Expositionsgrenzwerte
ACGIH:TLV-TWA 0.1 f/cc,respirable fibers*
OSHA:PEL-TWA 15 mg/m3 (total dust),5 mg/m3 (respirable fraction)
NIOSH:REL-TWA 10 mg/m3 (total dust),5 mg/m3 (respirable fraction)
Stabilität:
Stability
Kosmetik-Inhaltsstoffe Funktionen
ABRASIVE
InChI
1S/CSi/c1-2
InChIKey
HBMJWWWQQXIZIP-UHFFFAOYSA-N
SMILES
[C-]#[Si+]
Modulus of Elasticity
459 - 476 GPa
Knoop Microhardness
3000, at 25°C
Poissons Ratio
0.14, sintered
Shear Modulus
180 GPa, Calculated
IARC
2A (Vol. 111) 2017
NIST chemische Informationen
Silicon monocarbide(409-21-2)
EPA chemische Informationen
Silicon carbide (409-21-2)

Sicherheit

Kennzeichnung gefährlicher Xi
R-Sätze: 36/37/38
S-Sätze: 26-36
OEB B
OEL TWA: 10 mg/m3 (total)
WGK Germany  3
RTECS-Nr. VW0450000
TSCA  TSCA listed
HS Code  28492000
Speicherklasse 11 - Combustible Solids
Giftige Stoffe Daten 409-21-2(Hazardous Substances Data)

Siliciumcarbid Chemische Eigenschaften,Einsatz,Produktion Methoden

ERSCHEINUNGSBILD

GELBE BIS GRüNE, BIS BLAUE ODER BIS SCHWARZE KRISTALLE, ABHäNGIG VON DER REINHEIT.

ARBEITSPLATZGRENZWERTE

TLV: (als einatembarer Staub) 10 mg/m?(als TWA); TLV: (als alveolengängiger Staub) 3 mg/m?(als TWA); (ACGIH 2005).
MAK: (alveolengängige Fraktion des Aerosols) 1.5 mg/m? (DFG 2005).

INHALATIONSGEFAHREN

Eine belästigende Partikelkonzentration in der Luft kann beim Dispergieren schnell erreicht werden.

WIRKUNGEN BEI KURZZEITEXPOSITION

WIRKUNGEN BEI KURZZEITEXPOSITION:
Reizt möglicherweise mechanisch.

LECKAGE

Persönliche Schutzausrüstung: Atemschutzgerät, P1-Filter für inerte Partikel. Verschüttetes Material in abgedeckten Behältern sammeln.

R-Sätze Betriebsanweisung:

R36/37/38:Reizt die Augen, die Atmungsorgane und die Haut.

S-Sätze Betriebsanweisung:

S26:Bei Berührung mit den Augen sofort gründlich mit Wasser abspülen und Arzt konsultieren.
S36:DE: Bei der Arbeit geeignete Schutzkleidung tragen.

Beschreibung

Silicon carbide is a hard covalently bonded material predominantly produced by the carbothermal reduction of silica. Silicon carbide is made by heating silica sand and petroleum coke packed around electrodes in an electric resistance furnace to above 2200°C. Depending on the exact reaction conditions the resulting silicon carbide is either a fine powder or a bonded mass that requires crushing and milling to produce a usable feedstock. This material is very resistant to abrasion and to corrosion with a molten slag. It also has excellent resistance to thermal spalling. However as it is a carbide, it will oxidise readily, silicon carbide has a fairly high conductivity.
Several hundred structures of silicon carbide (polytypes) have been identified which have different stacking arrangements for the silicon and carbon atoms. The simplest structure is a diamond structure which is designated /3-SiC. Other structures are either hexagonal or rhombic and are referred to as a-SiC.

Chemische Eigenschaften

Silicon carbide is a yellow to green to bluishblack, iridescent crystalline substance. Colorless when pure.

Physikalische Eigenschaften

the properties of silicon carbide are that it is a refractory material (high melting point), it has excellent thermal conductivity and low thermal expansion, consequently it displays good thermal shock resistance. In addition, the high hardness, corrosion resistance and stiffness lead to a wide range of applications where wear and corrosion resistance are primary performance requirements. Silicon carbide possesses interesting electrical properties due to its semiconductor characteristics, the resistance of different compositions varying by as much as seven orders of magnitude.

Physikalische Eigenschaften

Green to bluish black, iridescent crystals. Soluble in fused alkali hydroxides. Abrasives best suited for grinding low-tensilestrength materials such as cast iron, brass, bronze, marble, concrete, stone and glass, optical structural, and wear-resistant components. Corroded by molten metals such as Na, Mg, Al, Zn, Fe, Sn, Rb, and Bi. Resistant to oxidation in air up to 1650°C. Maximum operating temperature of 2000°C in reducing or inert atmosphere.

Physikalische Eigenschaften

Semiconductor (Eg=3.03 eV) soluble in fused alkali hydroxides

Charakteristisch

Silicon carbide is a premium-priced unit which is employed in lining work for its uniformity, abrasion resistance and dimensional stability. It is resistant to most organics, inorganic acids, alkalis and salts in a variety of concentrations except to hydrofluoric acid and acid fluorides. The permeable units have the lowest resistance.

Verwenden

Silicon carbide is widely used as an abrasive in grinding and cutting glasses; in polishing glass and sharpening stones. It is used in the manufacture of porcelain, refractory brick, furnace linings, and emery paper. The compound also is used in semiconductor technology.

Definition

Bluish-black, iridescent crystals. Insoluble in water and alcohol; soluble in fused alkalies and molten iron. Excellent thermal conductivity, electrically conductive, resists oxida- tion at high temperatures. Noncombustible, a nui- sance particulate.

synthetische

Silicon carbide is prepared by fusing a mixture of silica (sand) and carbon (coke) with some salt and saw dust in an electric arc furnace at 3000°C.
SiO2(Sand)+3C(Coke)--(3000℃)--Sic+2CO
Salt and saw dust is added to infuse air into the product so that it can be broken into pieces easily. The product obtained is first washed with strong acid followed by strong base to remove basic and acidic impurities respectively. Finally, it is washed with water.

Vorbereitung Methode

Silicon carbide, also known by the trade name Carborundum, has been manufactured and used as an abrasive material for more than a century. It combines desirable properties of hardness and thermal resistance. It is produced by heating high-grade silica sand with finely ground carbon at 2400°C in an electric furnace. In its powdered or granular form, it has been used as the abrasive material in “paper and wheels.” It is used as an abrasive in sandblasting and engraving. It has been incorporated into ceramics and glass and especially into refractory ceramic materials.

Vorbereitung Methode

SiC was synthesized at the end of the 18th century with the name carborundum, and it was used as abrasive. In 1920 in Russia, O.V. Losev discovered two types of SiC from electro-luminescence and named them Type I and Type II. The electro-luminescence of Type I is greenish blue colored and that of Type II changes from orange to violet via yellow and green as the voltage increases from 6 to 28 V. The pure crystal is nominally obtained as 6H (a-II) SiC and the crystals with impurity are obtained as 15R and 4H. a-SiC (6H, 15R) is mainly synthesized using the sublimation method by heating the mixture of coke and silica sands at 2000℃ in the electrical furnace. SiC is segregated by cooling after melting Si in the carbon crucible.

Reaktionen

SiC is formed by the reaction with C at high temperature. It is not etched by acid other than the mixture of hydrofluoric acid and nitric acid. It reacts with caustic solution generating H2 to produce alkali silicate. Good alloys can be formed at the composition ratio of 0%–100% with Ge. (Refer to Ge.)

Allgemeine Beschreibung

Yellow to green to bluish-black, iridescent crystals. Sublimes with decomposition at 2700°C. Density 3.21 g cm-3. Insoluble in water. Soluble in molten alkalis (NaOH, KOH) and molten iron.

Reaktivität anzeigen

Silicon carbide is non-combustible. Generally unreactive. Soluble in molten alkalis (NaOH, KOH) and in molten iron.

Hazard

Upper respiratory tract irritant. Probable carcinogen.

Health Hazard

Silicon carbide, in certain forms, may be a cause of pneumoconiosis in exposed workers. Silicon carbide has generally been considered to be an inert dust with little adverse effect on the lungs.

Industrielle Verwendung

Silicon carbide is one of the very few totally man-made minerals used in refractory work. These are:
Oxide-bonded-(S102, A1201, Si02 or silicate glass), silicon oxynitride (Si2 ON2), silicon nitride (S13N4)
The first three of these four bonding systems result in a permeable product, and when failure occurs in such masonry systems due to chemical degradation, it is usually due to attack on the bond. Thus, permeable units (where the corrodent penetrates the mass) are far more rapidly damaged.
Self-bonded”—(silicon carbide to silicon carbide) impermeable ones, where the attack is limited to the surface.
The self-bonded product can be manufactured by either of two methods: reaction bonded or sintered. Both will produce an impermeable unit, and they have roughly comparable chemical resistances, but they do not have identical physical properties.

Sicherheitsprofil

Suspected carcinogen with experimental neoplastigenic data. A nuisance dust.

mögliche Exposition

A potential danger to those involved in the manufacture of silicon carbide abrasives, refractories, and semiconductors. Silicon carbide fibers are also produced in fibrous form as reinforcing fibers for composite materials.

Inkompatibilitäten

Dust may form explosive mixture with air. Sublimes with decomposition @ 2700C.

Waste disposal

Landfill

Einzelnachweise

1.https://en.wikipedia.org/wiki/Silicon_carbide#Uses
2.http://www.softschools.com/formulas/chemistry/silicon_carbide_uses_properties_structure_formula/282/
3.https://www.britannica.com/science/silicon-carbide
4.http://accuratus.com/silicar.html
5.https://www.intechopen.com/books/mostdownloaded/silicon-carbide-materials-processing-and-applications-in-electronic-devices
6.https://www.azom.com/article.aspxArticleID=3271
7.https://www.chemicalbook.com/productchemicalpropertiescb2431905.htm

Siliciumcarbid Upstream-Materialien And Downstream Produkte

Upstream-Materialien

Downstream Produkte


Siliciumcarbid Anbieter Lieferant Produzent Hersteller Vertrieb Händler.

Global( 360)Lieferanten
Firmenname Telefon E-Mail Land Produktkatalog Edge Rate
Henan Tianfu Chemical Co.,Ltd.
+86-0371-55170693 +86-19937530512
info@tianfuchem.com China 21533 55
career henan chemical co
+86-0371-86658258
sales@coreychem.com China 29766 58
BOC Sciences
+1-631-485-4226
inquiry@bocsci.com United States 19935 58
Neostar United (Changzhou) Industrial Co., Ltd.
+86-0519-85551759
marketing1@neostarunited.com China 8827 58
SIMAGCHEM CORP
+86-5922680277 +86-13806087780
sale@simagchem.com China 17339 58
Hefei TNJ Chemical Industry Co.,Ltd.
+86-0551-65418671 +86-189 4982 3763
sales@tnjchem.com China 34526 58
RongNa Biotechnology Co.,Ltd
+86-86-13583358881 +8618560316533
Brad@rongnabiotech.com China 3373 58
Dayang Chem (Hangzhou) Co.,Ltd.
+86-0571-88938639 17705817739
info@dycnchem.com China 52693 58
Zhuoer Chemical Co., Ltd
02120970332;
sales@zhuoerchem.com China 2901 58
Henan Alfa Chemical Co., Ltd
+8618339805032
sale03@alfachem.cn China 9858 58

409-21-2(Siliciumcarbid)Verwandte Suche:


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  • medium,120grit
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  • CARBORUNDUM BOILING CHIPS, 20 MESHCARBORUNDUM BOILING CHIPS, 20 MESHCARBORUNDUM BOILING CHIPS, 20 MESHCARBORUNDUM BOILING CHIPS, 20 MESH
  • CARBORUNDUM BOILING CHIPS, 4 MESHCARBORUNDUM BOILING CHIPS, 4 MESHCARBORUNDUM BOILING CHIPS, 4 MESHCARBORUNDUM BOILING CHIPS, 4 MESH
  • CARBORUNDUM BOILING CHIPS, 8 MESHCARBORUNDUM BOILING CHIPS, 8 MESHCARBORUNDUM BOILING CHIPS, 8 MESHCARBORUNDUM BOILING CHIPS, 8 MESH
  • Silicon carbide ,cloth(SiC)
  • Silicon carbide, α-phase, 99.5% trace metals basis
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  • Silicon carbide, 99% trace metals basis
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