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| | Pentakis(dimethylamino)tantalum Basic information |
| | Pentakis(dimethylamino)tantalum Chemical Properties |
| Melting point | 100 °C (dec.)(lit.) | | Boiling point | 100°C 0,1mm | | form | crystal | | color | orange | | Sensitive | moisture sensitive | | Hydrolytic Sensitivity | 8: reacts rapidly with moisture, water, protic solvents | | InChI | InChI=1S/5C2H6N.Ta/c5*1-3-2;/h5*1-2H3;/q5*-1;+5 | | InChIKey | VSLPMIMVDUOYFW-UHFFFAOYSA-N | | SMILES | [Ta](N(C)C)(N(C)C)(N(C)C)(N(C)C)N(C)C | | CAS DataBase Reference | 19824-59-0 |
| Hazard Codes | F,C | | Risk Statements | 11-14/15-34 | | Safety Statements | 16-26-36/37/39-43-45 | | RIDADR | UN 3131 4.3/PG 1 | | WGK Germany | 3 | | TSCA | No | | Storage Class | 4.3 - Hazardous materials which set free flammable gases upon contact with water | | Hazard Classifications | Eye Dam. 1
Flam. Sol. 1
Skin Corr. 1B
Water-react 1 |
| | Pentakis(dimethylamino)tantalum Usage And Synthesis |
| Chemical Properties | Pentakis (dimethylamino)tantalum (V), abbreviated as PDMAT, with the chemical formula C₁₀H₃₀N₅Ta, is an organometallic compound. It appears as orange crystals and is highly moisture-sensitive, reacting rapidly upon contact with water. Its molecular structure consists of a tantalum atom coordinated with five dimethylamino ligands. It is characterized by good thermal stability and low vapor pressure. As a precursor, PDMAT is widely used in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes.
 | | Uses |
Pentakis(dimethylamino)tantalum (PDMAT) was used as a tantalum source with either ammonia or monomethylhydrazine (MMH) as a nitrogen co-reactant.
| | Application | Pentadimethylaminotantalum (PDMAT) can serve as a precursor for TaN, which possesses excellent electrical conductivity and can be used to manufacture electrodes for semiconductor devices. It is also employed as a diffusion barrier layer in back-end-of-line (BEOL) semiconductor processes and for anode metallization in photovoltaic cells. In addition, PDMAT serves as a precursor for metal gate materials in CMOS processes with feature sizes below 45 nm.
Pentadimethylaminotantalum can also be used to prepare Ta₂O₅, which has a high dielectric constant and serves as a key material in dynamic random-access memory (DRAM), anti-reflective coatings, high-temperature resistors, gas sensors, capacitors, special optical glass with a high refractive index and low dispersion, and high-temperature specialty ceramics for aerospace applications.
Pentadimethylaminotantalum can also be used in the selective catalytic synthesis of chiral drugs, offering improved stereoselectivity. It can provide an additional oxygen source in enzyme-catalyzed reactions, thereby enhancing reaction efficiency and stability. As a novel carrier material, it can also modulate the physicochemical properties of catalysts to facilitate drug delivery and controlled release. | | General Description | Atomic number of base material: 73 Tantalum | | reaction suitability | core: tantalum
reagent type: catalyst | | Synthesis |
Pentakis(dimethylamino)tantalum(V) is synthesized by treating TaCl5 with lithium dimethylamide.
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| | Pentakis(dimethylamino)tantalum Preparation Products And Raw materials |
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